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SMBG130 0SERIE 74LVC1 FA1F4Z ISL41387 B20100 HYAAM 74LV1G
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  3. detail go to our website at www.twtysemi.com dmn3115udm features ? low on-resistance ? 60 m @ v gs = 4.5v ? 80 m @ v gs = 2.5v ? 130 m @ v gs = 1.5v ? very low gate threshold voltage ? low input capacitance ? esd protected gate ? fast switching speed ? lead free by design/rohs compliant (note 2) ? "green" device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot-26 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections: see diagram ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.015 grams (approximate) maximum ratings @t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss 30 v gate-source voltage v gss 8 v drain current (note 1) i d 3.2 a pulsed drain current (note 1) i dm 12.8 a thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value units total power dissipation (note 1) p d 900 mw thermal resistance, junction to ambient r ja 139 c/w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 4) drain-source breakdown voltage bv dss 30 ? ? v v gs = 0v, i d = 100 a zero gate voltage drain current i dss ? ? 1 a v ds = 30v, v gs = 0v gate-source leakage i gss ? ? 5 a v gs = 8v, v ds = 0v on characteristics (note 4) gate threshold voltage v gs ( th ) 0.5 ? 1.0 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) ? 40 50 76 60 80 130 m v gs = 4.5v, i d = 6a v gs = 2.5v, i d = 2a v gs = 1.5v, i d = 1.0a forward transfer admittance |y fs | ? 8 ? s v ds =10v, i d = 6a diode forward voltage (note 4) v sd ? 0.7 1.1 v v gs = 0v, i s = 2a dynamic characteristics input capacitance c iss ? 476 ? pf v ds = 15v, v gs = 0v f = 1.0mhz output capacitance c oss ? 77 ? pf reverse transfer capacitance c rss ? 59 ? pf notes: 1. device mounted on fr-4 pcb, minimu m recommended pad layout on 2oz. copper pads. 2. no purposefully added lead. 4. short duration pulse test used to minimize self-heating effect. sot-26 top view top view internal schematic g1 s1 d3 d2 d4 d1 esd protected smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com


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